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Amorphous ZrO2Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400
Fenning Liu, Yue Peng, Yan Liu, Genquan Han, Wenwu Xiao, Bobo Tian, Ni Zhong, Hui Peng, Chungang Duan, Yue Hao
Research output: Contribution to journal › Article › peer-review
6
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(Scopus)