@article{3af5c65739c94f5cb891f81258646fb5,
title = "Amorphous ZrO2Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400",
keywords = "Ferroelectric, FTJ, memoristor, oxygen vacancy, tunneling electroresistance, tunneling junction",
author = "Fenning Liu and Yue Peng and Yan Liu and Genquan Han and Wenwu Xiao and Bobo Tian and Ni Zhong and Hui Peng and Chungang Duan and Yue Hao",
note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2021",
month = may,
doi = "10.1109/LED.2021.3069837",
language = "English",
volume = "42",
pages = "696--699",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}