Amorphous ZrO2Tunnel Junction Memristor with a Tunneling Electroresistance Ratio above 400

Fenning Liu, Yue Peng, Yan Liu, Genquan Han, Wenwu Xiao, Bobo Tian, Ni Zhong, Hui Peng, Chungang Duan, Yue Hao

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Material Science

Physics

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Engineering