Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2

Morteza Kayyalha; Jesse Maassen; Mark Lundstrom; Li Shi; Yong P. Chen

doi:10.1063/1.4963364

Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS₂

Morteza Kayyalha, Jesse Maassen, Mark Lundstrom, Li Shi, Yong P. Chen

Medicine

科研成果: 期刊稿件 › 文章 › 同行评审

77 引用（Scopus）

源语言	英语
文章编号	134305
期刊	Journal of Applied Physics
卷	120
期	13
DOI	https://doi.org/10.1063/1.4963364
出版状态	已出版 - 10月 7 2016

!!!ASJC Scopus Subject Areas

一般物理与天文学

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AU - Kayyalha, Morteza

AU - Maassen, Jesse

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AU - Shi, Li

AU - Chen, Yong P.

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Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2

!!!ASJC Scopus Subject Areas

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Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS₂