Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2

Morteza Kayyalha; Jesse Maassen; Mark Lundstrom; Li Shi; Yong P. Chen

doi:10.1063/1.4963364

Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS₂

Morteza Kayyalha, Jesse Maassen, Mark Lundstrom, Li Shi, Yong P. Chen

Medicine

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Original language	English
Article number	134305
Journal	Journal of Applied Physics
Volume	120
Issue number	13
DOIs	https://doi.org/10.1063/1.4963364
Publication status	Published - Oct 7 2016

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.4963364

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title = "Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2 ",

author = "Morteza Kayyalha and Jesse Maassen and Mark Lundstrom and Li Shi and Chen, {Yong P.}",

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AU - Kayyalha, Morteza

AU - Maassen, Jesse

AU - Lundstrom, Mark

AU - Shi, Li

AU - Chen, Yong P.

PY - 2016/10/7

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JF - Journal of Applied Physics

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Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS₂

ASJC Scopus Subject Areas

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