Preliminary characterization of the response of an organic field effect transistor to ionizing radiation

Michael A. Hupman; Ian G. Hill; Alasdair Syme

doi:10.1016/j.radmeas.2018.08.008

Preliminary characterization of the response of an organic field effect transistor to ionizing radiation

Michael A. Hupman, Ian G. Hill, Alasdair Syme

Health Professions

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9 引用（Scopus）

源语言	英语
页（从-至）	31-35
页数	5
期刊	Radiation Measurements
卷	118
DOI	https://doi.org/10.1016/j.radmeas.2018.08.008
出版状态	已出版 - 11月 2018

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@article{9204985ec1084b86a8ad6797ec72586f,

title = "Preliminary characterization of the response of an organic field effect transistor to ionizing radiation",

author = "Hupman, {Michael A.} and Hill, {Ian G.} and Alasdair Syme",

note = "Funding Information: This work was supported in part by a grant from the Natural Sciences and Engineering Research Council of Canada ( RGPIN-2014-06113 ). Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = nov,

doi = "10.1016/j.radmeas.2018.08.008",

language = "English",

volume = "118",

pages = "31--35",

journal = "Radiation Measurements",

issn = "1350-4487",

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AU - Hupman, Michael A.

AU - Hill, Ian G.

AU - Syme, Alasdair

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DO - 10.1016/j.radmeas.2018.08.008

M3 - Article

AN - SCOPUS:85051676848

SN - 1350-4487

VL - 118

SP - 31

EP - 35

JO - Radiation Measurements

JF - Radiation Measurements

ER -

Preliminary characterization of the response of an organic field effect transistor to ionizing radiation

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