Phonon transport across a Si-Ge interface: The role of inelastic bulk scattering

Jesse Maassen; Vahid Askarpour

doi:10.1063/1.5051538

Phonon transport across a Si-Ge interface: The role of inelastic bulk scattering

Jesse Maassen, Vahid Askarpour

Medicine

科研成果: 期刊稿件 › 文章 › 同行评审

23 引用（Scopus）

源语言	英语
文章编号	013203
期刊	APL Materials
卷	7
期	1
DOI	https://doi.org/10.1063/1.5051538
出版状态	已出版 - 1月 1 2019

!!!ASJC Scopus Subject Areas

一般材料科学
一般工程

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Phonon transport across a Si-Ge interface: The role of inelastic bulk scattering

!!!ASJC Scopus Subject Areas

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