Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

TY - JOUR

T1 - Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

AU - Maassen, Jesse

N1 - Publisher Copyright: © 2022 American Chemical Society. All rights reserved.

PY - 2022/12/27

Y1 - 2022/12/27

KW - atomic layer deposition

KW - back-end-of-line compatibility

KW - charge neutrality level

KW - nanometer-thick transistor

KW - oxide semiconductor

KW - ultrahigh current

UR - http://www.scopus.com/inward/record.url?scp=85141122835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85141122835&partnerID=8YFLogxK

U2 - 10.1021/acsnano.2c10383

DO - 10.1021/acsnano.2c10383

M3 - Article

C2 - 36446079

AN - SCOPUS:85141122835

SN - 1936-0851

VL - 16

SP - 21536

EP - 21545

JO - ACS Nano

JF - ACS Nano

IS - 12

ER -