High-speed ultraviolet photodetectors based on 2D layered CuInP₂S₆nanoflakes

Keyphrases

• Band Gap Materials 50%
• Boron Nitride 100%
• CuInP2S6 50%
• High On-off Ratio 50%
• Intermediate Bandgap 50%
• Large Band Gap 50%
• Photodetection 50%
• Photoelectronic Device 50%
• Thio 50%
• Tunable Band Gap 50%
• Ultralow Dark Current 50%
• Ultraviolet Photodetection 50%
• UV Illumination 50%
• UV Photodetector 100%
• Wide Bandgap 50%

Material Science

• Boron Nitride 100%
• Transition Metal Dichalcogenide 100%