Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Kun Zhang, Yan Ling Cao, Yue Wen Fang, Qiang Li, Jie Zhang, Chun Gang Duan, Shi Shen Yan, Yu Feng Tian, Rong Huang, Rong Kun Zheng, Shi Shou Kang, Yan Xue Chen, Guo Lei Liu, Liang Mo Mei

科研成果: 期刊稿件文章同行评审

22 引用 (Scopus)
源语言英语
页(从-至)6334-6339
页数6
期刊Nanoscale
7
14
DOI
出版状态已出版 - 4月 14 2015
已对外发布

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  • 一般材料科学

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Zhang, K., Cao, Y. L., Fang, Y. W., Li, Q., Zhang, J., Duan, C. G., Yan, S. S., Tian, Y. F., Huang, R., Zheng, R. K., Kang, S. S., Chen, Y. X., Liu, G. L., & Mei, L. M. (2015). Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions. Nanoscale, 7(14), 6334-6339. https://doi.org/10.1039/c5nr00522a