@article{88ad799b434e4972a8939a577ee9cf5f,
title = "ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles",
keywords = "Amorphous, FeFET, Germanium, Memory, ZrO",
author = "Huan Liu and Yue Peng and Genquan Han and Yan Liu and Ni Zhong and Chungang Duan and Yue Hao",
note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",
year = "2020",
doi = "10.1186/s11671-020-03353-6",
language = "English",
volume = "15",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",
}