@article{c829ac1043f24228aa6280436dfaf5f3,
title = "Nonvolatile Negative Optoelectronic Memory Based on Ferroelectric Thin Films",
keywords = "annealing, BFO thin films, interface effect, negative photoconductivity effect, nonvolatile optoelectronic memory",
author = "Nan Yang and Hu, {Chuan Zhu} and Ren, {Zhong Qi} and Bao, {Si Yao} and Tian, {Bo Bo} and Yue, {Fang Yu} and Xiang, {Ping Hua} and Ni Zhong and Duan, {Chun Gang} and Chu, {Jun Hao}",
note = "Publisher Copyright: Copyright {\textcopyright} 2020 American Chemical Society.",
year = "2020",
month = apr,
day = "28",
doi = "10.1021/acsaelm.0c00066",
language = "English",
volume = "2",
pages = "1035--1040",
journal = "ACS Applied Electronic Materials",
issn = "2637-6113",
publisher = "American Chemical Society",
number = "4",
}