@article{9bd645d0e67244bf90148d87a3b44864,
title = "Non-Volatile Field-Effect Transistors Enabled by Oxygen Vacancy-Related Dipoles for Memory and Synapse Applications",
keywords = "Field-effect transistor (FET), memory, nonvolatile, oxygen vacancy, synapse",
author = "Yue Peng and Wenwu Xiao and Fenning Liu and Yan Liu and Genquan Han and Nan Yang and Ni Zhong and Chungang Duan and Chen Liu and Yichun Zhou and Ze Feng and Hong Dong and Yue Hao",
note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = sep,
doi = "10.1109/TED.2020.3007563",
language = "English",
volume = "67",
pages = "3632--3636",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}