Memory Behavior of an Al2O3Gate Dielectric Non-Volatile Field-Effect Transistor

Yue Peng; Wenwu Xiao; Genquan Han; Yan Liu; Fenning Liu; Chen Liu; Yichun Zhou; Nan Yang; Ni Zhong; Chungang Duan; Yue Hao

doi:10.1109/LED.2020.3010363

Memory Behavior of an Al₂O₃Gate Dielectric Non-Volatile Field-Effect Transistor

Yue Peng, Wenwu Xiao, Genquan Han, Yan Liu, Fenning Liu, Chen Liu, Yichun Zhou, Nan Yang, Ni Zhong, Chungang Duan, Yue Hao

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Original language	English
Article number	9144299
Pages (from-to)	1340-1343
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	9
DOIs	https://doi.org/10.1109/LED.2020.3010363
Publication status	Published - Sept 2020
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

FET
memory
Non-volatile
oxygen vacancy

Access to Document

10.1109/LED.2020.3010363

Cite this

@article{b4d9283108a540f8b920427ee9b8c1af,

title = "Memory Behavior of an Al2O3Gate Dielectric Non-Volatile Field-Effect Transistor",

keywords = "FET, memory, Non-volatile, oxygen vacancy",

author = "Yue Peng and Wenwu Xiao and Genquan Han and Yan Liu and Fenning Liu and Chen Liu and Yichun Zhou and Nan Yang and Ni Zhong and Chungang Duan and Yue Hao",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = sep,

doi = "10.1109/LED.2020.3010363",

language = "English",

volume = "41",

pages = "1340--1343",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Memory Behavior of an Al2O3Gate Dielectric Non-Volatile Field-Effect Transistor

AU - Peng, Yue

AU - Xiao, Wenwu

AU - Han, Genquan

AU - Liu, Yan

AU - Liu, Fenning

AU - Liu, Chen

AU - Zhou, Yichun

AU - Yang, Nan

AU - Zhong, Ni

AU - Duan, Chungang

AU - Hao, Yue

PY - 2020/9

Y1 - 2020/9

KW - FET

KW - memory

KW - Non-volatile

KW - oxygen vacancy

UR - http://www.scopus.com/inward/record.url?scp=85091148233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85091148233&partnerID=8YFLogxK

U2 - 10.1109/LED.2020.3010363

DO - 10.1109/LED.2020.3010363

M3 - Article

AN - SCOPUS:85091148233

SN - 0741-3106

VL - 41

SP - 1340

EP - 1343

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 9144299

ER -

Memory Behavior of an Al₂O₃Gate Dielectric Non-Volatile Field-Effect Transistor

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this