In-situ atomic-level observation of reversible first-order transition in Hf0.5Zr0.5O ferroelectric film

Yonghui Zheng, Tianjiao Xin, Jing Yang, Yunzhe Zheng, Zhaomeng Gao, Yiwei Wang, Yilin Xu, Yan Cheng, Kai Du, Diqing Su, Ruiwen Shao, Bingxing Zhou, Zhen Yuan, Qilan Zhong, Cheng Liu, Rong Huang, Xiaodong Tang, Chungang Duan, Sannian Song, Zhitang SongHangbing Lyu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)
Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages631-634
Number of pages4
ISBN (Electronic)9781665489591
DOIs
Publication statusPublished - 2022
Externally publishedYes
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: Dec 3 2022Dec 7 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period12/3/2212/7/22

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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