From Si and C encapsulated SiO2 to SiC: Exploring the influence of sol-gel polymer substitution on thermally induced nanocrystal formation

Mita Dasog; Christina Rachinsky; Jonathan G.C. Veinot

doi:10.1039/c1jm11858g

From Si and C encapsulated SiO₂ to SiC: Exploring the influence of sol-gel polymer substitution on thermally induced nanocrystal formation

Mita Dasog, Christina Rachinsky, Jonathan G.C. Veinot

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	12422-12427
Number of pages	6
Journal	Journal of Materials Chemistry
Volume	21
Issue number	33
DOIs	https://doi.org/10.1039/c1jm11858g
Publication status	Published - Sept 7 2011
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
Materials Chemistry

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Dasog, M., Rachinsky, C., & Veinot, J. G. C. (2011). From Si and C encapsulated SiO₂ to SiC: Exploring the influence of sol-gel polymer substitution on thermally induced nanocrystal formation. Journal of Materials Chemistry, 21(33), 12422-12427. https://doi.org/10.1039/c1jm11858g

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From Si and C encapsulated SiO₂ to SiC: Exploring the influence of sol-gel polymer substitution on thermally induced nanocrystal formation

ASJC Scopus Subject Areas

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