@article{08b48475a3644d73a69cef509bf83fe9,
title = "Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory",
keywords = "AlO, Amorphous, Ferroelectric, Memory, Non-volatile field-effect transistor, Oxygen vacancy dipole",
author = "Yue Peng and Genquan Han and Fenning Liu and Wenwu Xiao and Yan Liu and Ni Zhong and Chungang Duan and Ze Feng and Hong Dong and Yue Hao",
note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",
year = "2020",
doi = "10.1186/s11671-020-03364-3",
language = "English",
volume = "15",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",
}