Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2ferroelectric film with in-situ rapid thermal annealing

Tianjiao Xin, Yonghui Zheng, Yan Cheng, Kai Du, Yiwei Wang, Zhaomeng Gao, Diqing Su, Yunzhe Zheng, Qilan Zhong, Cheng Liu, Rong Huang, Chungang Duan, Sannian Song, Zhitang Song, Hangbing Lyu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)
Original languageEnglish
Title of host publication2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages343-344
Number of pages2
ISBN (Electronic)9781665497725
DOIs
Publication statusPublished - 2022
Externally publishedYes
Event2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 - Honolulu, United States
Duration: Jun 12 2022Jun 17 2022

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2022-June
ISSN (Print)0743-1562

Conference

Conference2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022
Country/TerritoryUnited States
CityHonolulu
Period6/12/226/17/22

ASJC Scopus Subject Areas

  • Electrical and Electronic Engineering

Keywords

  • ferroelectric
  • HZO film
  • in-situ TEM
  • RTA

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